absolute maximum ratings t a = 25 c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 60 v v gss gate-source voltage 20 v i d drain current - continuous (note 1a) 1.7 a - pulsed 10 p d power dissipation for single operation (note 1a) 0.5 w (note 1b) 0.46 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 250 c/w r jc thermal resistance, junction-to-case (note 1) 75 c/w package marking and ordering information device marking device reel size tape width quantity 5630 fdn5630 7 8mm 3000 units gs d g d s supersot -3 tm general description this n-channel mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. this mosfet features very low r ds(on) in a small sot23 footprint. fairchild?s powertrench technology provides faster switching than other mosfets with comparable r ds(on) specifications. the result is higher overall efficiency with less board space. applications dc/dc converter motor drives features 1.7 a, 60 v. r ds(on) = 0.100 ? @ v gs = 10 v r ds(on) = 0.120 ? @ v gs = 6 v. optimized for use in high frequency dc/dc converters. low gate charge. very fast switching. supersot tm - 3 provides low r ds(on) in sot23 footprint. fdn5630 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 2 4008-318-123 http://www.twtysemi.com
notes: 1: r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user's board design. scale 1 : 1 on letter size paper 2: pulse test: pulse width 300 s, duty cycle 2.0% a) 250 c/w when mounted on a 0.02 in 2 pad of 2 oz. cu. b) 270 c/w when mounted on a minimum pad. electrical characteristics t a = 25 c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 60 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a,referenced to 25 c 63 mv/ c i dss zero gate voltage drain current v ds = 48 v, v gs = 0 v 1 a i gssf gate-body leakage current, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate-body leakage current, reverse v gs = -20 v, v ds = 0 v -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 12.4 3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a,referenced to 25 c 6.9 mv/ c r ds(on) static drain-source on-resistance v gs = 10 v, i d = 1.7 a v gs = 10 v, i d = 1.7 a, t j = 125 c v gs = 6 v, i d = 1.6 a 0.073 0.127 0.083 0.100 0.180 0.120 ? i d(on) on-state drain current v gs = 10 v, v ds = 1.7 v 5 a g fs forward transconductance v ds = 10 v, i d = 1.7 a 6 s dynamic characteristics c iss input capacitance 400 pf c oss output capacitance 102 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 21 pf switching characteristics (note 2) t d(on) turn-on delay time 10 20 ns t r turn-on rise time 6 15 ns t d(off) turn-off delay time 15 28 ns t f turn-off fall time v dd = 30 v, i d = 1 a, v gs = 10 v, r gen = 6 ? 515ns q g total gate charge 7 10 nc q gs gate-source charge 1.6 nc q gd gate-drain charge v ds = 20 v, i d = 1.7 a, v gs = 10 v, 1.2 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 0.42 a v sd drain-source diode forward voltage v gs = 0 v, i s = 0.42 a (note 2) 0.72 1.2 v fdn5630 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2 of 2 4008-318-123 http://www.twtysemi.com
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